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this is information on a product in full production. june 2013 docid15535 rev 4 1/14 14 STL17N3LLH6 n-channel 30 v, 0.0038 typ., 17 a stripfet? vi deepgate? power mosfet in a powerflat? 3.3 x 3.3 package datasheet - production data figure 1. internal schematic diagram features ? r ds(on) * q g industry benchmark ? extremely low on-resistance r ds(on) ? high avalanche ruggedness ? low gate drive power losses ? very low switching gate charge applications ? switching applications description this device is an n-channel power mosfet developed using the 6 th generation of stripfet? deepgate? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. d(5, 6, 7, 8) g(4) s(1, 2, 3) 8 123 4 7 6 5 am15810v1 powerflat? 3.3 x 3.3 1 2 3 4 order code v ds r ds(on) max. i d STL17N3LLH6 30 v 0.0045 17 a (1) 1. the value is rated according r thj-pcb. table 1. device summary order code marking package packaging STL17N3LLH6 17n3l powerflat? 3.3 x 3.3 tape and reel www.st.com
contents STL17N3LLH6 2/14 docid15535 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
docid15535 rev 4 3/14 STL17N3LLH6 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 30 v v gs gate-source voltage 20 v i d (1) 1. the value is rated according r thj-pcb . drain current (continuous) at t pcb = 25 c 17 a i d (1) drain current (continuous) at t pcb = 100 c 11 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 68 a p tot (3) 3. the value is rated according r thj-c . total dissipation at t c = 25 c 50 w p tot (1) total dissipation at t pcb = 25 c 2 w derating factor 0.03 w/c t j operating junction temperature -55 to 150 c t stg storage temperature c table 3. thermal resistance symbol parameter value unit r thj-case (2) thermal resistance junction-case 2.5 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1inch2, 2oz cu, t < 10 sec. thermal resistance junction-pcb 42.8 c/w r thj-pcb (2) 2. steady state. thermal resistance junction-pcb 63.5 c/w
electrical characteristics STL17N3LLH6 4/14 docid15535 rev 4 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current v gs = 0, v ds = 30 v 1 a v gs = 0, v ds = 30 v, t c =125 c 10 a i gss gate body leakage current v gs = 20 v, v ds =0 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 8.5 a v gs = 4.5 v, i d = 8.5 a 0.0038 0.0057 0.0045 0.0073 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 24 v, f=1 mhz, v gs =0 - 1690 - pf c oss output capacitance - 290 - pf c rss reverse transfer capacitance -176 - pf q g total gate charge v dd = 24 v, i d = 17 a v gs = 4.5 v (see figure 14) -17 - nc q gs gate-source charge - 8 - nc q gd gate-drain charge - 6 - nc r g gate input resistance f=1 mhz gate dc bias = 0 test signal level = 20 mv open drain -1.7 - table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 24 v, i d = 8.5 a, r g = 4.7 , v gs = 10 v (see figure 13) -9.5-ns t r rise time - 30 - ns t d(off) turn-off delay time - 37 - ns t f fall time - 12 - ns
docid15535 rev 4 5/14 STL17N3LLH6 electrical characteristics table 7. source drain diode symbol parameter test conditions min typ. max unit i sd source-drain current - 17 a i sdm (1) 1. pulse width limited by safe operating area. source-drain current (pulsed) - 68 a v sd (2) 2. pulsed: pulse duration=300s, duty cycle 1.5%. forward on voltage i sd = 17 a, v gs = 0 - 1.1 v t rr reverse recovery time i sd = 17 a, di/dt = 100 a/s, v dd = 24 v -24 ns q rr reverse recovery charge - 16.8 nc i rrm reverse recovery current - 1.4 a
electrical characteristics STL17N3LLH6 6/14 docid15535 rev 4 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized b vdss vs temperature figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 100ms 1s 10ms 0.01 tj=150c tc=25c single pulse am15811v1 zthj-pcb = k * rthj- pcb, rthj-pcb = 63.5 c/w single pulse 0.05 0.02 0.01 =0.5 0.2 0.1 k 10 t p (s) -2 10 -1 1 10 100 10 -2 10 -1 10 -3 10 -3 am15809v1 i d 60 40 20 0 0 2 v ds (v) 4 (a) 1 3 5 3v v gs =10v am12996v1 i d 20 0 0 2 v gs (v) (a) 1 3 40 60 v ds =3v am12997v1 bv dss -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.98 1.00 1.02 1.04 125 150 0.96 1.06 i d =1ma am12998v1 r ds(on) 3 2 1 0 0 40 i d (a) (m ) 20 60 4 5 6 7 10 30 50 8 9 70 am05508v1_a
docid15535 rev 4 7/14 STL17N3LLH6 electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =24v i d =17a 25 12 30 35 am13000v1 c 1600 1100 600 100 0 10 v ds (v) (pf) 2100 20 ciss coss crss am13001v1 v gs(th) 0.7 0.6 0.5 0.4 -50 0 t j (c) (norm) -25 0.8 75 25 50 100 125 150 0.9 1.0 1.1 1.2 i d =250a am13002v1 r ds(on) 1.0 0.8 0.6 0.4 -75 t j (c) (norm) -25 75 25 125 175 1.6 1.4 1.2 v gs =10 v i d =8.5 a am13003v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0.4 0.5 0.6 0.7 0.8 0.9 t j =-55c t j =175c t j =25c am13004v1
test circuits STL17N3LLH6 8/14 docid15535 rev 4 3 test circuits figure 13. switching times test circuit for resistive load figure 14. gate charge test circuit figure 15. test circuit for inductive load switching and diode recovery times figure 16. unclamped inductive load test circuit figure 17. unclamped inductive waveform figure 18. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid15535 rev 4 9/14 STL17N3LLH6 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL17N3LLH6 10/14 docid15535 rev 4 table 8. powerflat? 3.3 x 3.3 mechanical data dim. mm min. typ. max. a0.700.800.90 b0.250.300.39 c0.140.150.20 d3.103.303.50 d1 3.05 3.15 3.25 d2 2.15 2.25 2.35 e0.550.650.75 e3.103.303.50 e1 2.90 3.00 3.10 e2 1.60 1.70 1.80 h0.250.400.55 k0.650.750.85 l0.300.450.60 l1 0.05 0.15 0.25 l2 0.15 ? 8 10 12
docid15535 rev 4 11/14 STL17N3LLH6 package mechanical data figure 19. powerflat? 3.3 x 3.3 drawing bottom view side view top view 8465286_a
package mechanical data STL17N3LLH6 12/14 docid15535 rev 4 figure 20. powerflat? 3.3 x 3.3 recommended footprint 8465286_footprint
docid15535 rev 4 13/14 STL17N3LLH6 revision history 5 revision history table 9. document revision history date revision changes 24-mar-2009 1 first release. 06-jul-2010 2 updated table 4: on/off states . 10-nov-2010 3 document status promoted from preliminary data to datasheet. 17-jun-2013 4 ? updated: figure 1 , silhouette in cover page and section 4: package mechanical data ? minor text changes
STL17N3LLH6 14/14 docid15535 rev 4 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not authorized for use in weapons. nor are st products designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statem ents and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2013 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - swed en - switzerland - united kingdom - united states of america www.st.com

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